8 f o 1 e g a p 0 0 . 1 . v e r 0 0 1 0 j e 8 5 0 0 s d 9 0 r ma r 19, 2013 t e e h s a t a d ne3521m04 n-channel gaas hj-fet, k band low noise and high - gain fea t ure s ? low noise figure a n d hi gh ass o ciated gain: nf = 0.85 db typ ., ga = 11 db t y p. @ v ds = 2 v, i d = 10 m a , f = 20 ghz nf = 0.9 db t y p. , ga = 10. 5 db t y p . @v ds = 2 v, i d = 6 m a , f = 2 0 g h z ( r e f er e n c e v al u e ) ? f l a t - l ead 4 - p in t h in- typ e s upe r m i nim o l d ( m 0 4 ) pac k age applications ? db s l n b gai n - st a ge, m i x-st age ? l o w noi se am plifier fo r m i c row a v e c o mm u n ication s ys tem ordering information pa rt numbe r orde r numbe r pack a g e qua n tity ma rk ing supply i ng for m ne35 21m0 4 - t 2 ne35 21m0 4 - t 2-a 3 kpcs/reel ne35 21m0 4 - t 2b ne35 21m0 4 - t 2b-a f lat -lead 4-pi n t hin- t y pe s u per minimold (m04) (pb-f ree) 15 kpcs/reel v86 ? embosse d ta p e 8 mm w i de ? pin 1 ( s ourc e), pin 2 (drain) fac e t he p e r f o r ati o n s i de of t h e tape rema r k t o order evalu a tion sam p les, contact your n earb y sa les offi ce. part number fo r sample ord e r: ne352 1m04-a absolute maxim u m ratings (t a = +25 c, unless otherw ise specified) para mete r symbol ratings unit drain to s o urc e voltag e v d s 4 .0 v gate to source voltage v g s ?3.0 v i t n e r r u c n i a r d d i d s s ma i t n e r r u c e t a g g 80 a t o tal p o w e r d i ssipati o n note p t o t 125 m w chan n e l t e m per a t u r e t c h + 125 c storage t e mperature t s t g ?65 t o + 125 c note: mounte d on 1 . 08 c m 2 1 .0 mm ( t) glass epo xy pw b ca utio n observe p r e c aution s wh en handlin g be cause these d evi ce s are se nsitive to electrostati c disch arg e. r09 d s0 058e j01 00 rev.1.00 mar 19, 20 13 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ne3521m04 r09ds0058ej0100 rev.1.00 page 2 of 8 mar 19, 2013 recommended operating range (t a = +25 c, unless otherwi se specified) parameter symbol min. typ. max. unit drain to source voltage v ds 1 2 3 v drain current i d 3 10 15 ma input power p in ? ? 0 dbm electrical characteristics (t a = +25 c, unless otherwise specified) parameter symbol test condi tions min. typ. max. unit gate to source leak current i gso v gs = ?3.0 v ? 0.5 10 a saturated drain current i dss v ds = 2 v, v gs = 0 v 25 45 70 ma gate to source cut-off voltage v gs (off) v ds = 2 v, i d = 100 a ?0.2 ?0.7 ?1.3 v transconductance gm v ds = 2 v, i d = 10 ma 50 ? ? ms noise figure nf ? 0.85 1.2 db associated gain ga v ds = 2 v, i d = 10 ma, f = 20 ghz 9 11 ? db standard characterist ics for reference (t a = +25 c, unless otherwise specified) parameter symbol test conditions reference value unit noise figure nf 0.9 db associated gain ga v ds = 2 v, i d = 6 ma, f = 20 ghz 10.5 db a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne3521m04 r09ds0058ej0100 rev.1.00 page 3 of 8 mar 19, 2013 typical characteristics (t a = +25 c, unless otherwise specified) ambient temperature t a (c) total power dissipation p tot (mw) total power dissipation vs. ambient temperature gate to source voltage v gs (v) drain current i d (ma) drain current vs. gate to source voltage drain to source voltage v ds (v) 50 100 125 150 250 200 -0.80 -0.60 -0.40 -0.20 0.00 0 50 10 20 30 40 50 60 70 80 100 150 125 200 250 0 frequency f (ghz) minimum noise figure, associated gain vs.frequency drain current i d (ma) minimum noise figure nfmin (db) minimum noise figure nfmin (db) associated gain ga (db) associated gain ga (db) v ds = 2 v drain current i d (ma) drain current vs. drain to source voltage 0.0 1.0 2.0 3.0 4.0 10 20 30 40 50 60 70 80 0 vgs = 0 v -0.1 v -0.2 v -0.3 v -0.4 v -0.5 v 10 5152030 25 0.0 0.2 0.4 0.6 1.2 1.4 1.6 2.0 1.8 0.8 1.0 0 2 4 6 12 14 16 20 18 8 10 v ds = 2 v i d = 10 ma ga nfmin minimum noise figure, associated gain vs.drain current 0 0.0 1.0 0.5 1.5 2.0 2.5 4 8 7 6 5 10 9 12 11 14 13 5 101520 30 25 f = 20 ghz v ds = 2 v ga nfmin remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne3521m04 r09ds0058ej0100 rev.1.00 page 4 of 8 mar 19, 2013 s-parameters s-parameters and noise parameters are provided on our web site in a form (s2p) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. click here to download s-parameters. [products] [rf devices] [device parameters] url http://www.renesas.com/products/microwave/ a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne3521m04 r09ds0058ej0100 rev.1.00 page 5 of 8 mar 19, 2013 package dimensions flat-lead 4-pin thin-t ype super minimold (m 04) (unit: mm) pin connections 1. source 2. drain 3. source 4. gate 0.590.05 0.11 +0.1 ?0.05 (bottom view) 43 12 1.25 2.00.1 1.30 (1.05) 0.60 0.65 0.65 0.65 1.30 1.25 2.00.1 12 43 1.250.1 2.050.1 0.30 +0.1 ?0.05 0.40 +0.1 ?0.05 0.30 +0.1 ?0.05 0.30 +0.1 ?0.05 v86 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne3521m04 r09ds0058ej0100 rev.1.00 page 6 of 8 mar 19, 2013 mounting pad dimensions flat-lead 4-pin thin-t ype super minimold (m 04) (unit: mm) -reference 1- 4 3 2 1 1.20 1.20 device direction 1 2 3 4 1.35 0.60 0.75 0 . 4 2 0 . 4 2 0 . 3 8 0 . 2 8 1.35 0.60 0.75 0.56 4 - 0.50 1.42 0.80 0.58 1.26 4 3 2 1 1.20 1.20 device direction 1 2 3 4 1.35 0.60 0.75 0 . 4 2 0 . 4 2 0 . 3 8 0 . 2 8 1.35 0.60 0.75 0.56 4 - 0.50 1.42 0.80 0.58 1.26 -reference 2- 2 1 3 4 0.6 1.6 1.25 1.3 0.6 0.5 remark the mounting pad layout in this document is for reference only. 1 2 3 4 device direction 1 2 3 4 device direction a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne3521m04 r09ds0058ej0100 rev.1.00 page 7 of 8 mar 19, 2013 recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nearby sales office. soldering method soldering conditions condition symbol infrared reflow peak temperature (package surface temperature) : 260 c or below time at peak temperature : 10 seconds or less time at temperature of 220 c or higher : 60 seconds or less preheating time at 120 to 180 c : 120 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below ir260 partial heating peak temperature (package surface temperature) : 350 c or below soldering time (per side of device) : 3 seconds or less maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below hs350 caution do not use different soldering methods together (except for partial heating). a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ne3521m04 r09ds0058ej0100 rev.1.00 page 8 of 8 mar 19, 2013 caution gaas products this product uses gallium arsenide (gaas). gaas vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. ? follow related laws and ordinances when disposi ng of the product. if there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subjec t to special control) up until final disposal. ? do not burn, destroy, cut, crush, or chemically dissolve the product. ? do not lick the product or in any way allow it to enter the mouth. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ne3521m04 data sheet description rev. date page summary 1.00 mar 19, 2013 - first edition issued
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